Electrically controllable magnetoresistance switching in multifunctional organic based spin-valve devices

LSMO Low Resistance High resistance The Fig.4a shows the spin valve presented previously in Fig.1 before any higher voltage was applied this corresponds to the lowest resistance state and a SVMR of 22%. Next, we apply a voltage bias of -1.5 V and the device resistance increases from 362 kOhms to 4.3 MOhms. The voltage is subsequently reduced back to the measuring value of -0.1 V and the magnetoresistance is measured. A dramatic modi cation of the magnetic switching is clearly visible in the Fig. 4b no identi able SV e ect can be now detected. This remarkable e ect is clearly reversible: the spin valve e ect is recovered by moving back to the low resistance mode. Thus applying a positive bias of +2.5 V the device moves to 671 kOhms resistance value. In this state we recover a part of the full SVMR, namely 11% (Fig.4c). By further increasing the programming voltage to +3 V a 18.8% SVMR is detected at a standard -0.1 V measuring voltage (Fig.4d). We recover the full magnetoresistance intensity after the application of +3.5V programming voltage (Fig.4f). It is worth noting that applying the same voltage a second time results in no modi cation of either SVMR or device resistance (compare Fig.4d and Fig.4e for +3V). The complete reversibility of the process is nally con rmed by disappearance of the spin valve e ect upon of the application of the programming voltage -1.5V (Fig.4g) Electrical control of Spin-Valve E ect Spintronics is one of the most fertile approaches to meet current demands from the information and communication technology, such as lower power consumption, further miniaturization and multifunctionality required for the development of new device concepts and new materials . Nowadays, spintronics is facing the challenge of evolving from the rst generation of devices, which lead to a revolution in the information storage (GMR readheads), to devices that feature multi-operation capabilities (logic, communication and storage) within the same materials technology. The electrical control of the magnetoresistance can provide such capabilities. In this poster we will show that by meaning of Organic based Spin-Valves it is possible to easily achieve this capability. Mirko Prezioso, Alberto Riminucci, Ilaria Bergenti, Patrizio Graziosi, David Brunel, and Valentin A. Dediu